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| UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE *Low Collector-Emitter Saturation Voltage VCE(sat)=-1v(MAX)@-15A *Fast Switching Speeds 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25C) PARAMETER Collector to Emitter Voltage Emitter To Base Voltage Collector Current(DC) Collector Dissipation(Tc=25C) Collector Dissipation(Ta=25C) Junction Temperature Storage Temperature *PW<=10mS,Duty Cycle<=50% SYMBOL VCEO VEBO IC Pc Pc Tj Tstg VALUE -30 -5 -10 50 1.67 150 -55 ~ +150 UNIT V V A W W C C ELECTRICAL CHARACTERISTICS(Ta=25C) PARAMETER Collector Cutoff Current Emitter Cutoff current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time SYMBOL ICES IEBO VCE(SAT) VBE(SAT) hFE1 FT CCB ton tstg tf TEST CONDITIONS VCE=Rated ; VCEO,VEB=0 VEB=-5V,Ic=0 IC=-10A,IB=-0.1A IC=-10A,IB=-1A IC=-10A,VCE=-1V VCE=-10V,IC=-0.5A VCB=-10V,f=1MHZ Ic=-5A,IB=-0.5A IB=-0.5A MIN TYP MAX -10 1 -1 -1.5 UNIT A A V V MHZ PF nS nS nS 100 40 230 135 500 100 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-003,B UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN 100 TYPICAL CHARACTERISTION POWER DERATING POWER DISSIPATION, P D (WATTS) 50 45 40 35 30 25 20 15 10 5 0 0 25 75 100 50 TEMPERATURE, Tc () 125 150 0.01 0.05 0.1 0.2 0.5 1 2 DC CURRENT GAIN, hFE VCE = 1V TJ = 25 80 60 40 20 5 10 COLLECTOR CURRENT, IC (AMP) DC CURRENT GAIN 200 VCE = 1V TJ = 25 VOLTAGE, V (VOLTS) "ON" VOLTAGES 5.0 2.0 1.0 0.5 0.2 0.1 0.05 VCE(sat)@IC/IB =10 VBE(sat)@IC/IB =10 TJ = 25 DC CURRENT CAIN, hFE 160 120 80 40 0 0.01 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 COLLECTOR CURRENT, I C (AMP) COLLECTOR CURRENT, IC (AMP) FORWARD BIAS SAFE OPERATING AREA TC<70 Duty Cycle<50% COLLECTOR CURRENT, IC (Amp) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 1 D45H1,2 D45H4,5 D45H7,8,9 D45H10,11,12 DC 1s 10s 100s 1ms 100 50 10 20 5 2 COLLECTOR EMITTER VOLTAGE, VCE (VOLTS) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R203-003,B UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R203-003,B |
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